• Bachelor's degree in Electrical Engineering in the areas of design of high-performance RF/Analog Receiver/TIA design.
• 10 - 15 years experience Or MSc EE Or PhD EE with 5+ years of experience in the areas of design of high-performance RF/Analog Receiver/TIA design.
• Active circuit design as well as technical leadership.
• Design leading edge transimpedance amplifier design, primarily in Silicon Germanium (SiGe) BiCMOS (Bipolar Complementary Metal Oxide Semiconductor) technology, where circuit performance will need to transcend beyond industry leading products.
• Develop transmission line structures and other millimeter wave structures to enable higher performance than would normally be achievable.
• Design of hi-performance broadband analog circuits for optical front-end receivers.
• Design of various other analog circuits including linear regulators, AGC loop, current/voltage sensors, bandgaps etc.
• Develop microarchitecture of major circuit blocks and guide team of designers to implement them. Work with various technologies including SiGe BiCMOS and CMOS.
• Work with other functional groups to facilitate post-silicon validation, qualification, transition to mass production, and customer support.

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